PART |
Description |
Maker |
MSC23B2321D-XXDS4 MSC23B2321D MSC23B2321D-XXBS4 |
From old datasheet system 2097152-word x 32-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE 2,097,152-word x 32-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE 4PDT 5A MINI 24VAC
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OKI electronic components OKI[OKI electronic componets] OKI SEMICONDUCTOR CO., LTD.
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HM51W17805B HM51W17805BJ-8 HM51W17805BLJ-8 HM51W17 |
Plastic internal molding, Noise prevention, Small and lightweight interface; HRS No: 112-3355-0 71; Contact Mating Area Plating: Tin 2097152-word*8-bit Dynamic random access memory
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Hitachi,Ltd.
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TC514100AAZL-10 TC514100AAZL-70 TC514100AAZL-80 TC |
Contact Gender:Socket; Circular Shell Style:Straight Plug; Insert Arrangement:32-15 RoHS Compliant: No 4,194,304 WORD x BIT DYNAMIC RAM 4194304 WORD x BIT DYNAMIC RAM
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Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
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MSC23B236D-XXDS8 MSC23B236D-XXBS8 MSC23B236D B236D |
2,097,152-word x 36-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE 2097152-word x 36-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE From old datasheet system RECTIFIER FAST-RECOVERY SINGLE 3A 300V 125A-ifsm 1.3V-vf 40ns 5uA-ir DO-201AD 500/BULK RECTIFIER FAST-RECOVERY SINGLE 3A 300V 125A-ifsm 1.3V-vf 40ns 5uA-ir DO-201AD 1.2K/REEL-13
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OKI electronic components OKI[OKI electronic componets] OKI SEMICONDUCTOR CO., LTD.
|
MK31VT432-10YC |
4194304 Word x 32 Bit Synchronous Dynamic RAM Module (1BANK)(4M瀛??2浣??姝ュ???AM妯″?) 4194304 Word x 32 Bit Synchronous Dynamic RAM Module (1BANK)(4M字32位同步动态RAM模块) 4194304字32位同步动态随机存储器模块BANK)(4分字× 32位同步动态内存模块) 4194304 Word x 32 Bit Synchronous Dynamic RAM Module (1BANK)(4M字2位同步动态RAM模块) From old datasheet system
|
OKI SEMICONDUCTOR CO., LTD.
|
THM322020S-10 THM322020S-80 THM322020SG-10 THM3220 |
Chip-on-Glass (COG) Technology, 16 Characters x 2 Lines 2097152 WORDS x 32 BIT DYNAMIC RAM MODULE 2,097,152 WORDS x 32 BIT DYNAMIC RAM MODULE 2/097/152 WORDS x 32 BIT DYNAMIC RAM MODULE
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Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
HM514100DLS-6 HM514100DLS-7 HM514100DLS-8 |
4,194,304-word x 1-bit dynamic RAM, 60ns 4,194,304-word x 1-bit dynamic RAM, 70ns 4,194,304-word x 1-bit dynamic RAM, 80ns
|
Hitachi Semiconductor
|
UPD4217805LLE-A50 UPD42S17805LLE-A50 UPD4217805LG5 |
3.3V OPERATION 16 M-BIT DYNAMIC RAM 2M-WORD BY 8-BIT,EDO x8 EDO Page Mode DRAM x8 EDO公司页面模式DRAM 3.3V OPERATION 16 M-BIT DYNAMIC RAM 2M-WORD BY 8-BIT,HYPER PAGE MODE 3.3运行16位动态随机存储器2m-word8位,超页模式
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NEC TOKIN America Inc. NEC TOKIN, Corp.
|
TC511664BZ TC511664B |
65536 word x 16 bit DRAM 65,536 WORD x 16 BIT DYNAMIC RAM
|
Toshiba Semiconductor
|
HM5216808CSERIES 5216808C |
1,048,576-word ′ 8-bit ′ 2-bank Synchronous Dynamic RAM
(SSTL-3)
2,097,152-word ′ 4-bit ′ 2-bank Synchronous Dynamic RAM
(SSTL-3) From old datasheet system
|
hitachi
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